Product Description

The definitive hands-on guide to heterojunction bipolar transistors

In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers.

Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features:

• A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines
• A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications
• Over 800 illustrations, showing how to use concepts and equations in the real world
• An introduction to device physics and semiconductor basics
• Many worked-out examples and end-of-chapter problem sets
• Fully developed mathematical derivations

Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.

Product Details

• Amazon Sales Rank: #236697 in Books
• Published on: 1998-04-27
• Original language: English
• Number of items: 1
• Binding: Hardcover
• 1284 pages

From the Publisher
Heterojunction bipolar transistors (HBT) offer substantial improvements in performance over the silicon bipolar transistor. HBTs will permit performance improvements by combining high speeds with low power requirements. Important applications are found in such fields as wireless communications, power amplifiers, mixers and frequency synthesizers.

From the Back Cover
The definitive hands-on guide to heterojunction bipolar transistors

In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers.

Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable--introductory and advanced, theoretical and practical--from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations

Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.

About the Author
WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.

Customer Reviews

The content of the book
I am William Liu, the author. People ask me about the content of the book enough times that, I'd like to put it here.

Chapter 1: Basic Properties and Device Physics of III-V Materials
1-1 semiconductor crystalline properties
1-2 molecular beam epitaxy
1-3 metalorganic chemical vapor deposition
1-4 lattice-mismatched layers
1-5 basic device physics
1-6 continuity equations and quasi-neutrality assumption
1-7 material parameters

Chapter 2 Two-Terminal Heterojunctin Devices
2-1 p+-N heterojunction under termal equilibrium
2-2 p+-N heterojunction under external bias
2-3 p-N+, P+-n, and P-n+ heterojunctions
2-4 graded heterojunctins
2-5 diode current-voltage characteristics
2-6 space charge recombination and generation currents
2-7 isotype heterojunctions

Chapter 3 DC Current Gain
3-1 basic transistor operation
3-2 base current components
3-3 collector current ideality factor
3-4 current gain flattening
3-5 surface passivation
3-6 surface current ideality factor
3-7 base contact recombination
3-8 temperature dependence
3-9 base quasi-electric field
3-10 analytical solution of the continuity equation
3-11 critical base-emitter contact spacing
3-12 minority-carrier lateral diffusion length
3-13 device simulator results
3-14 parasititc conduction in the passivation ledge

Chapter 4 Nonideal DC Characteristics
4-1 current gain fall-off mechanisms
4-2 emitter crowding
4-3 d.c. intrinsic base resistance
4-4 emitter doping effects
4-5 Kirk effects
4-6 self-heating effects
4-7 two-dimensional current flow
4-8 avalanche breakdown
4-9 leakage current
4-10 knee voltage and offset voltage
4-11 current gain oscillation

Chapter 5 Thermal-Electrical Properties
5-1 the heat conduction equation
5-2 steady-state junctin temperature due to self-heating
5-3 thermal-electrical coupling
5-4 temperature-dependent thermal conductivity
5-5 experimental determination of steady-state junction temperature
5-6 transient thermal response
5-7 temperature at the metal strip line
5-8 thermal resistance in a dot structure
5-9 heat conduction through electrical carriers

Chapter 6 Collapse of Current Gain
6-1 basic characteristics
6-2 collapse loci, regression loci, and s-factor loci
6-3 gain collapse in one-finger HBT?
6-4 thermal coupling
6-5 numerical model
6-6 prevention techniques
6-7 base ballasting
6-8 substrate temperature effects
6-9 interaction with avalanche breakdown
6-10 constant Vbe and common-base operations
6-11 collapse inverter
6-12 gain collapse in GaInP/GaAs HBTs
6-13 gain collapse in InP/InGaAs HBTs
6-14 Newton-Raphson numerical technique

Chapter 7 Failure Mechanisms and Reliability Issues
7-1 failure mechanisms of AlGaAs/GaAs HBTs
7-2 Si BJTs versus AlGaAs/GaAs HBTs
7-3 safe operating area
7-4 failure mechanisms of InP/InGaAs HBTs
7-5 reliability basics
7-6 degrdation characteristics
7-7 degradation mechanisms

Chapter 8 Small-Signal Properties
8-1 a simple circuit model
8-2 intrinsic common-base y-parameters
8-3 intrinsic common-emitter y-parameters
8-4 r.f. intrinsic base impedance
8-5 hybrid-pi model
8-6 intrinsic z- h- and s-parameters
8-7 base quasi-electric field
8-8 epitaxial resistances
8-9 contact resistances
8-10 cutoff frequency (fT)
8-11 maximum oscillation frequency (fmax)
8-12 second-order small-signal model
8-13 second-order expression for fT
8-14 second-order expression for fmax
8-15 inductance effects

Chapter 9 Epitaxial Layer Design
9-1 example: calculatin of fT and fmax
9-2 emitter layer design
9-3 collector layer design
9-4 double collector and inverter-field collector designs
9-5 subcollector layer design
9-6 base layer design
9-7 dopant-graded base

Chapter 10 Geometrical Layout Design
10-1 emitter width design
10-2 base contact width design
10-3 contact spacing and collector contact width design
10-4 emitter length design (base metal resistance consideration)
10-5 emitter length design (thermal consideration)
10-6 dot geometry transistor design
10-7 comparison of stripe and dot geometries

Chapter 11 Power Amplifier
11-1 sinusoidal power
11-2 small-signal power amplifier
11-3 large-signal power amplifier
11-4 power gain and power-added-efficiency
11-5 overdriven and selectively tuned amplifiers
11-6 sources of undesirable power dissipations
11-7 emitter inductance
11-8 unit-cell design

Chapter 12 Distortion and Noise
12-1 harmonic distortion
12-2 intermodulation distortions and two-tone characteristics
12-3 mixer
12-4 differential pair
12-5 noise characteristics
12-6 noise figure

Chapter 13 Switching Characteristics and SPICE Models
13-1 basic charge-control model
13-2 second-order analysis
13-3 rise time and fall time
13-4 switching of transistors in saturation
13-5 storage charge
13-6 junction capacitive charges
13-7 Ebers-Moll SPICE model
13-8 Gummel-Poon SPICE model
13-9 area and temeprature dependences and noise models
13-10 extraction of SPICE parameters

Chapter 14 Transistor Fabrication
14-1 d.c. fabrication process
14-2 single-figner-device r.f. fabrication process
14-3 GaInP (InP) and InGaAs processing
14-4 MMIC r.f. fabrication process
14-5 ashering effects

Chapter 15 Measured Transistor Performances
15-1 d.c. characteristics
15-2 small-signal characteristics
15-3 high-frequency performance at high current
15-4 emitter doping effects
15-5 Pnp HNTs
15-6 d.c. current gain and cutoff frequency
15-7 electron saturation velocity in GaIP
15-8 InP based HBTs
15-9 unit-cell large-signal results
15-10 GaInP/GaAs/GaInP DHBT characteristics
15-11 linearity characteristics
15-12 MMIC amplifier performance
15-13 latterally etched undercut results
15-14 1/f noise characteristics
15-15 HBT-on-Si
15-16 conductive substrate and leaky subcollector

An indispensible advanced reference for HBTs
This is an excellent advanced reference of HBTs covering in great detail GaAs/AlGaAs, GaAs/InGaP and fair coverage of InGaAs/InAlAs HBTs. Despite being an old book (published in 1998) in a very dynamic field it is almost impossible to be outdated any time soon for at least the following reasons:
1- It covers working concepts of HBTs in meticulous detail making very clever and extensive use of Mathematics without eclipsing the underlying physics.
2- Excellent strategy of applying Poisson equation for heterostructures and then using that knowledge for drawing the band diagrams ( Kroemer will love it!)
3- Complete chapter on Electrical-thermal modelling solving heat conduction equation again in a manner which is both intuitive and rigorous followed by extensive real-world data and its analysis.
4- Complete chapter with examples on failure mechanisms in HBTs of different material systems.
5- Extensive discussion of different components of base current, their idealities and their dependence on device layout followed by their role in carrier transport and hence their effect on the gain of an amplifier.
6- Complete, unabridged derivations of small signal models starting from basic drift-diffusion equations all the way to getting Y, S and other parameters and then leading to the expressions for cut-off ( fT ) and maximum oscillation (fmax) frequency.
7- Very thorough coverage of parasitics covering extrinsic resistances and capacitances and their effect on transistor performance. Complete worked out examples starting from solving Poisson equation for heterojunctions to deriving fT and fmax values.
8- Very good coverage of Ebers-Moll and Gummel-Poon models with very valuable details of the measurement setup for Vector Network Analyzer or other parameter analyzers.
9- Excellent set of problems to apply and master the concepts discussed in the main text.
The omission of SiGe HBTs is logical as the book's title is III-V HBTs and any effort to include it in subsequent editions will probably render this book too thick to be used frequently and conveniently and especially as a graduate textbook. The only downside of the book is that it has some and rather insidious typos. In short it is a must-read for any research student or professional in the area of HBTs.

Good Book for HBTs
It is a good book for HBTs with a lot of details in it.